Semiconductor device and manufacturing method of semiconductor device

ABSTRACT

According to one embodiment, a semiconductor device includes a plurality of wires arranged in parallel at a predetermined pitch, a plurality of first contacts that are each connected to an odd-numbered wire among the wires and are arranged in parallel in an orthogonal direction with respect to a wiring direction of the wires, and a plurality of second contacts that are each connected to an even-numbered wire among the wires and are arranged in parallel in an orthogonal direction with respect to the wiring direction of the wires in such a way as to be offset from the first contacts in the wiring direction of the wires, in which the first contacts are offset from the second contacts by a pitch of the wires in an orthogonal direction with respect to the wiring direction of the wires.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is based upon and claims the benefit of priority fromJapanese Patent Application No. 2012-36187, filed on Feb. 22, 2012; theentire contents of which are incorporated herein by reference.

FIELD

Embodiments described herein relate generally to a semiconductor deviceand a manufacturing method of a semiconductor device.

BACKGROUND

The array pitch of contacts of wires becomes small with the scaling of aline and space of the wires, therefore, it has becomes difficult to layout the contacts. If the contacts are arranged offset from each other tolay out the contacts, the chip size increases by the amount of offset ofthe contacts.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a plan view illustrating a schematic configuration of acontact region of a semiconductor device according to a firstembodiment;

FIG. 2A to FIG. 2E are plan views illustrating a manufacturing method ofa contact region of a semiconductor device according to a secondembodiment;

FIG. 3A is a plan view illustrating a manufacturing method of a contactregion of a semiconductor device according to a third embodiment andFIG. 3B is a cross-sectional view cut along line A-A in FIG. 3A;

FIG. 4A is a plan view illustrating the manufacturing method of thecontact region of the semiconductor device according to the thirdembodiment and FIG. 4B is a cross-sectional view cut along line A-A inFIG. 4A;

FIG. 5A is a plan view illustrating the manufacturing method of thecontact region of the semiconductor device according to the thirdembodiment and FIG. 5B is a cross-sectional view cut along line A-A inFIG. 5A;

FIG. 6A is a plan view illustrating the manufacturing method of thecontact region of the semiconductor device according to the thirdembodiment and FIG. 6B is a cross-sectional view cut along line A-A inFIG. 6A;

FIG. 7A is a plan view illustrating the manufacturing method of thecontact region of the semiconductor device according to the thirdembodiment and FIG. 7B is a cross-sectional view cut along line A-A inFIG. 7A;

FIG. 8A is a plan view illustrating the manufacturing method of thecontact region of the semiconductor device according to the thirdembodiment and FIG. 8B is a cross-sectional view cut along line A-A inFIG. 8A;

FIG. 9A is a plan view illustrating the manufacturing method of thecontact region of the semiconductor device according to the thirdembodiment and FIG. 9B is a cross-sectional view cut along line A-A inFIG. 9A;

FIG. 10A is a plan view illustrating the manufacturing method of thecontact region of the semiconductor device according to the thirdembodiment and FIG. 10B is a cross-sectional view cut along line A-A inFIG. 10A;

FIG. 11A is a plan view illustrating the manufacturing method of thecontact region of the semiconductor device according to the thirdembodiment and FIG. 11B is a cross-sectional view cut along line A-A inFIG. 11A;

FIG. 12A is a plan view illustrating the manufacturing method of thecontact region of the semiconductor device according to the thirdembodiment and FIG. 12B is a cross-sectional view cut along line A-A inFIG. 12A;

FIG. 13A is a plan view illustrating the manufacturing method of thecontact region of the semiconductor device according to the thirdembodiment and FIG. 13B is a cross-sectional view cut along line A-A inFIG. 13A;

FIG. 14A is a plan view illustrating the manufacturing method of thecontact region of the semiconductor device according to the thirdembodiment, FIG. 14B is a cross-sectional view cut along line A-A inFIG. 14A when contact holes are vertically processed, and FIG. 14C is across-sectional view cut along line A-A in FIG. 14A when contact holesare tapered;

FIG. 15A is a plan view illustrating a manufacturing method of a contactregion of a semiconductor device according to a fourth embodiment andFIG. 15B is a cross-sectional view cut along line A-A in FIG. 15A;

FIG. 16A is a plan view illustrating a manufacturing method of thecontact region of the semiconductor device according to the fourthembodiment, FIG. 16B is a cross-sectional view cut along line A-A inFIG. 16A, and FIG. 16C is a cross-sectional view illustrating aconfiguration in which upper layer wires are formed on contacts in FIG.16B;

FIG. 17A to FIG. 17F are plan views illustrating a manufacturing methodof a contact region of a semiconductor device according to a fifthembodiment;

FIG. 18A to FIG. 18F are plan views illustrating a manufacturing methodof a contact region of a semiconductor device according to a sixthembodiment;

FIG. 19A to FIG. 19D are plan views illustrating a manufacturing methodof a contact region of a semiconductor device according to a seventhembodiment; and

FIG. 20A to FIG. 20D are plan views illustrating the manufacturingmethod of the contact region of the semiconductor device according tothe seventh embodiment.

DETAILED DESCRIPTION

In general, according to one embodiment, a plurality of wires, aplurality of first contacts, and a plurality of second contacts areincluded. The wires are arranged in parallel at a predetermined pitch.The first contacts are each connected to an odd-numbered wire among thewires and are arranged in parallel in an orthogonal direction withrespect to a wiring direction of the wires. The second contacts are eachconnected to an even-numbered wire among the wires and are arranged inparallel in an orthogonal direction with respect to the wiring directionof the wires in such a way as to be offset from the first contacts inthe wiring direction of the wires. The first contacts are offset fromthe second contacts by a pitch of the wires in an orthogonal directionwith respect to the wiring direction of the wires.

A semiconductor device and a manufacturing method of the semiconductordevice according to the embodiments will be explained below withreference to the drawings. The present invention is not limited to theseembodiments.

First Embodiment

FIG. 1 is a plan view illustrating a schematic configuration of acontact region of a semiconductor device according to the firstembodiment. A NAND flash memory is applied as an example of thesemiconductor device.

In FIG. 1, bit lines BL1 to BL8 are arranged in parallel at a wiringpitch PH in an orthogonal direction with respect to a wiring directionthereof. The wiring pitch PH of the bit lines BL1 to BL8 can be made tocorrespond to a minimum pitch of a line and space in a semiconductorintegrated circuit. This wiring pitch PH can satisfy the relationshipPH<0.25*λ/NA, where λ is an exposure wavelength in lithography and NA isa numerical aperture in a projection optical system. Moreover, a widthHP of each of the bit lines BL1 to BL8 can be made to correspond to ½ ofa minimum pitch in a semiconductor integrated circuit.

The bit lines BL1 to BL8 are provided with a contact region CR and bitcontacts CB and CB′ are formed in the contact region CR. The bitcontacts CB′ are connected to odd-numbered bit lines among the bit linesBL1 to BL8 and the bit contacts CB are connected to even-numbered bitlines among the bit lines BL1 to BL8. The bit contacts CB′ are arrangedin parallel in an orthogonal direction with respect to the wiringdirection of the bit lines BL1 to BL8 and the bit contacts CB arearranged in parallel in an orthogonal direction with respect to thewiring direction of the bit lines BL1 to BL8 in such a way as to beoffset from the bit contacts CB′ in the wiring direction of the bitlines BL1 to BL8. The bit contacts CB are offset from the bit contactsCB′ by the wiring pitch PH in an orthogonal direction with respect tothe wiring direction of the bit lines BL1 to BL8. In other words, aninterval DA between the bit contacts CB and CB′ in an orthogonaldirection with respect to the wiring direction of the, bit lines BL1 toBL8 is equal to the wiring pitch PH. At this time, the accuracy of theinterval DA between the bit contacts CB and CB′ is equal to the accuracyof the wiring pitch PH.

Moreover, word lines WL1, WL2, WL1′, and WL2′ and select gate lines SGDand SGD′ are arranged in parallel in an orthogonal direction withrespect to the wiring direction of the bit lines BL1 to BL8. The contactregion CR is arranged between the select gate lines SGD and SGD′. Theword lines WL1 and WL2 are arranged on the select gate line SGD side andthe word lines WL1′ and WL2′ are arranged on the select gate line SGD′side.

The lower ends of the bit contacts CB and CB′ can be connected to ahigh-concentration impurity diffusion layer formed between the selectgate lines SGD and SGD′ in active areas isolated from each other by atrench.

The bit contacts CB′ are connected to odd-numbered bit lines among thebit lines BL1 to BL8, the bit contacts CB are connected to even-numberedbit lines among the bit lines BL1 to BL8, and the bit contacts CB arearranged offset from the bit contacts CB′ in the wiring direction of thebit lines BL1 to BL8, therefore, even when the wiring pitch PH of thebit lines BL1 to BL8 corresponds to a minimum pitch by opticallithography, a short circuit between the bit contacts CB and CB′ can beprevented while suppressing an increase in a width DY of the contactregion CR.

Second Embodiment

FIG. 2A to FIG. 2E are plan views illustrating a manufacturing method ofa contact region of a semiconductor device according to the secondembodiment.

In FIG. 2A, mask patterns 1 are formed on a reticle 7. A plurality ofthe mask patterns 1 having a linear shape is formed in parallel in anorthogonal direction with respect to a wiring direction DH in such a wayas to be offset in the middle by the wiring pitch PH in an orthogonaldirection with respect to the wiring direction DH. The wiring pitch PHcan be made to correspond to a minimum pitch of a line and space in asemiconductor integrated circuit. This wiring pitch PH can satisfy therelationship PH<0.25*λ/NA, where λ is an exposure wavelength inlithography and NA is a numerical aperture in a projection opticalsystem. At this time, the width of the mask pattern 1 can be set to 2PH. Moreover, the interval between the mask patterns 1 can be set to 2PH.

Then, as shown in FIG. 2B, core patterns 2 onto which the mask patterns1 are transferred are formed on a processing target layer 8 by using amethod such as ArF immersion exposure. A resist material or a hard maskmaterial, such as a BSG film and a silicon nitride film, may be used asthe material for the core patterns 2. The processing target layer 8 maybe a semiconductor substrate, a dielectric layer formed on thesemiconductor substrate, or the like, and is not specifically limited.

Next, as shown in FIG. 2C, the core patterns 2 are slimmed by a method,such as isotropic etching, to thin the line width of the core patterns2. Then, for example, a sidewall material having a high selectivity withrespect to the core patterns 2 is deposited on the whole surface of theprocessing target layer 8 including the sidewalls of the core patterns 2by a method, such as the CVD. As the sidewall material having a highselectivity with respect to the core patterns 2, for example, when thecore pattern 2 is formed of a BSG film, a silicon nitride film can beused. Then, the processing target layer 8 is exposed while leaving thesidewall material on the sidewalls of the core patterns 2 by performinganisotropic etching on the sidewall material, thereby forming sidewallpatterns 3 on the sidewalls of the core patterns 2. At this time, thesidewall pattern 3 is offset in the middle by the wiring pitch PH in anorthogonal direction with respect to the wiring direction DH.

Next, as shown in FIG. 2D, the core patterns 2 are removed from over theprocessing target layer 8 while leaving the sidewall patterns 3 on theprocessing target layer 8. Next, mask patterns 4 that cover part of thespaces between the sidewall patterns 3 are formed on the processingtarget layer 8 by using the photolithography technology and the etchingtechnology, thereby forming openings H11 and H11′ surrounded by thesidewall patterns 3 and the mask patterns 4. At this time, the openingsH11 and H11′ can be arranged in two rows in an orthogonal direction withrespect to the wiring direction DH. Moreover, the openings H11′ of thefirst row are offset from the openings H11 of the second row by thewiring pitch PH in an orthogonal direction with respect to the wiringdirection DH. A resist material or a hard mask material, such as a BSGfilm and a silicon nitride film, may be used as the material for themask patterns 4.

Then, openings 5 and 5′ formed by transferring the openings H11 and H11′are formed in the processing target layer 8 by etching the processingtarget layer 8 via the openings H11 and H11′. At this time, the openings5 and 5′ can be arranged in two rows in an orthogonal direction withrespect to the wiring direction DH. Moreover, the openings 5′ of thefirst row are offset from the openings 5 of the second row by the wiringpitch PH in an orthogonal direction with respect to the wiring directionDH.

Then, as shown in FIG. 2E, the sidewall patterns 3 and the mask patterns4 are removed from over the processing target layer 8 in which theopenings 5 and 5′ are formed. Thus, wires arranged in parallel at thewiring pitch PH in an orthogonal direction with respect to the wiringdirection DH can be formed on the openings 5 and 5′ along the wiringdirection DH. The width of the wires can be set to ½ of the wiring pitchPH.

The openings 5 and 5′ are formed in the regions partitioned by thesidewall patterns 3, therefore, even when the wiring pitch PH is setequal to or less than the resolution of the lithography, the contactscan be formed in the wires by arranging the openings 5 and 5′ in tworows.

Third Embodiment

FIG. 3A to FIG. 14A are plan views illustrating a manufacturing methodof a contact region of a semiconductor device according to the thirdembodiment, and FIG. 3B to FIG. 13B are cross-sectional views cut alongline A-A in. FIG. 3A to FIG. 13A, respectively, FIG. 14B is across-sectional view cut along line A-A in FIG. 14A when contact holesare vertically processed, and FIG. 14C is a cross-sectional view cutalong line A-A in FIG. 14A when contact holes are tapered.

In FIG. 3A and FIG. 3B, an interlayer dielectric film 12 is formed on anunderlying layer 11 and lower layer wires 13 are embedded in theinterlayer dielectric film 12. The underlying layer 11 may be asemiconductor substrate, a dielectric layer formed on the semiconductorsubstrate, or the like, and is not specifically limited. An interlayerdielectric film 14 is formed on the lower layer wires 13 and mask layers15 and 16 and a core layer 17 are sequentially stacked on the interlayerdielectric film 14. Moreover, the lower layer wires 13 may be activeareas isolated by a trench in a NAND flash memory.

Then, mask patterns 18 are formed on the core layer 17 by using a methodsuch as ArF immersion exposure. A plurality of the mask patterns 18having a linear shape is formed in parallel in an orthogonal directionwith respect to the wiring direction DH in such a way as to be offset inthe middle by the wiring pitch PH in an orthogonal direction withrespect to the wiring direction DH. A resist material can be used as thematerial for the mask patterns 18.

Next, as shown in FIG. 4A and FIG. 4B, core patterns 19 onto which themask patterns 18 are transferred are formed on the mask layer 16 byetching the core layer 17 with the mask patterns 18 as a mask. A hardmask material, such as a BSG film and a silicon nitride film, can beused as the material for the core patterns 19.

Next, as shown in FIG. 5A and FIG. 5B, the core patterns 19 are slimmedby a method, such as isotropic etching, to thin the line width of thecore patterns 19.

Next, as shown in FIG. 6A and FIG. 6B, for example, a sidewall material20 having a high selectivity with respect to the core patterns 19 isdeposited on the whole surface of the mask layer 16 including thesidewalls of the core patterns 19 by a method, such as the CVD. As thesidewall material 20 having a high selectivity with respect to the corepatterns 19, for example, when the core pattern 19 is formed of a BSGfilm, a silicon nitride film can be used.

Next, as shown in FIG. 7A and FIG. 7B, the mask layer 16 is exposedwhile leaving the sidewall material 20 on the sidewalls of the corepatterns 19 by performing anisotropic etching on the sidewall material20, thereby forming sidewall patterns 21 on the sidewalls of the corepatterns 19. At this time, the sidewall pattern 21 is offset in themiddle by the wiring pitch PH in an orthogonal direction with respect tothe wiring direction DH.

Next, as shown in FIG. 8A and FIG. 8B, the core patterns 19 are removedfrom over the mask layer 16 while leaving the sidewall patterns 21 onthe mask layer 16.

Next, as shown in FIG. 9A and FIG. 9B, the sidewall patterns 21 aretransferred onto the mask layer 16 by etching the mask layer 16 with thesidewall patterns 21 as a mask. A material having a low selectivity withrespect to the sidewall patterns 21 can be used as the material for themask layer 16. For example, when the sidewall pattern 21 is formed of asilicon nitride film, a BSG film can be used as the mask layer 16.

Next, as shown in FIG. 10A and FIG. 10B, a mask layer 22 is formed onthe mask layer 15 in such a way that the mask layer 16 onto which thesidewall patterns 21 are transferred is embedded. Furthermore, a masklayer 23 is formed on the mask layer 22. A material having a lowselectivity with respect to the mask layer 16 and the mask layer 22 canbe used as the material for the mask layer 15. Moreover, a materialhaving a low selectivity with respect to the mask layer 16 can be usedas the material for the mask layer 22. For example, when the mask layer16 is formed of a BSG film, a polycrystalline silicon film can be usedas the mask layer 22 and a silicon nitride film can be used as the masklayer 15. Moreover, a resist material can be used as the material forthe mask layer 23.

Next, as shown in FIG. 11A and FIG. 11B, the mask layer 23 is patternedin such a way as to expose regions between a stepped portion and bothend portions of the mask layer 16 onto which the sidewall patterns 21are transferred by using the photolithography technology. Then, the masklayer 22 between the mask layers 16 exposed from the mask layer 23 isremoved by etching the mask layer 22 via the patterned mask layer 23,thereby forming openings H0 and H0′ surrounded by the patterned masklayers 16 and 22. At this time, the openings H0′ are arranged inparallel in the first row in an orthogonal direction with respect to thewiring direction DH and the openings HO are arranged in parallel in thesecond row in an orthogonal direction with respect to the wiringdirection DH. Moreover, the openings H0′ of the first row are offsetfrom the openings H0 of the second row by the wiring pitch PH in anorthogonal direction with respect to the wiring direction DH.

Next, as shown in FIG. 12A and FIG. 12B, after removing the mask layer23, the openings H0 and H0′ are transferred onto the mask layer 15 byetching the mask layer 15 via the openings H0 and H0′ surrounded by themask layers 16 and 22, thereby forming the openings H1 and H1′ in themask layer 15.

Next, as shown in FIG. 13A and FIG. 13B, the mask layers 16 and 22 areremoved from over the mask layer 15 in which the openings H1 and H1′ areformed.

Next, as shown in FIG. 14A and FIG. 14B, the openings H1 and H1′ aretransferred onto the interlayer dielectric film 14 by etching theinterlayer dielectric film 14 via the openings H1 and H1′ formed in themask layer 15, thereby forming openings H2 and H2′ in the interlayerdielectric film 14. At this time, the surfaces of the lower layer wires13 are exposed via the openings H2 and H2′. A material having a lowselectivity with respect to the mask layer 15 can be used as thematerial for the interlayer dielectric film 14. For example, when themask layer 15 is formed of a silicon nitride film, a silicon oxide filmcan be used as the interlayer dielectric film 14.

When etching the interlayer dielectric film 14 via the openings H1 andH1′, the bottom portions of the openings H2 and H2′ may be thinned asshown in FIG. 14C by tapering the interlayer dielectric film 14. At thistime, the width of the bottom portions of the openings H2 and H2′ can bemade equal to the width of the lower layer wires 13.

Fourth Embodiment

FIG. 15A and FIG. 16A are plan views illustrating a manufacturing methodof a contact region of a semiconductor device according to the fourthembodiment, FIG. 15B and FIG. 16B are cross-sectional views cut alongline A-A in FIG. 15A and FIG. 16A, respectively, and FIG. 16C is across-sectional view illustrating a configuration in which upper layerwires are formed on contacts in FIG. 16B.

In FIG. 15A, after the processes in FIG. 13A and FIG. 13B, sidewallpatterns 27 are formed on the sidewalls of the openings H1 and H1′ toform openings H3 and H3′ surrounded by the sidewall patterns 27.

Next, as shown in FIG. 16A and FIG. 16B, the openings H3 and H3 aretransferred onto the interlayer dielectric film 14 by etching theinterlayer dielectric film 14 via the openings H3 and H3 surrounded bythe sidewall patterns 27, thereby forming openings H4 and H4′ in theinterlayer dielectric film 14. At this time, the width of the openingsH4 and H4′ can be made equal to the width of the lower layer wires 13.

Next, as shown in FIG. 16C, after embedding a contact material 24 in theopenings H4 and H4′, an interlayer dielectric film 25 is formed on theinterlayer dielectric film 14. As the contact material 24, for example,conductor, such as Al and Cu, can be used. Then, upper layer wires 26connected to the lower layer wires 13 via the contact material 24 areembedded in the interlayer dielectric film 25.

In the above embodiment, the method is explained in which the sidewallpatterns 27 are formed on the sidewalls of the openings H1 and H1′ forforming the openings H4 and H4′, however, the openings H4 and H4′ havinga width smaller than the openings H1 and H1′ may be formed by adjustingthe processing conditions.

Fifth Embodiment

FIG. 17A to FIG. 17F are plan views illustrating a manufacturing methodof a contact region of a semiconductor device according to the fifthembodiment.

In FIG. 17A, core patterns 32 are formed on a processing target layer 38by using a method such as ArF immersion exposure. A plurality of thecore patterns 32 having a linear shape is formed in parallel in anorthogonal direction with respect to the wiring direction DH in such away as to be offset back and forth in three stages by the wiring pitchPH in an orthogonal direction with respect to the wiring direction DH.The wiring pitch PH can be made to correspond to a minimum pitch of aline and space in a semiconductor integrated circuit. At this time, thewidth of the core patterns 32 can be set to 2 PH. Moreover, the intervalbetween the core patterns 32 can be set to 2 PH. A resist material or ahard mask material, such as a BSG film and a silicon nitride film, maybe used as the material for the core patterns 32. The processing targetlayer 38 may be a semiconductor substrate, a dielectric layer formed onthe semiconductor substrate, or the like, and is not specificallylimited.

Next, as shown in FIG. 17B, the core patterns 32 are slimmed by amethod, such as isotropic etching, to thin the line width of the corepatterns 32. Then, sidewall patterns 33 are formed on the sidewalls ofthe core pattern 32. At this time, the sidewall pattern 33 has aninternal offset by the amount of the wiring pitch PH in an orthogonaldirection with respect to the wiring direction DH.

Next, as shown in FIG. 17C, the core patterns 32 are removed from overthe processing target layer 38 while leaving the sidewall patterns 33 onthe processing target layer 38.

Next, as shown in FIG. 17D, for example, a sidewall material isdeposited on the whole surface of the processing target layer 38including the sidewalls of the sidewall patterns 33 by a method, such asthe CVD. Then, the processing target layer 38 is exposed while leavingthe sidewall material on the sidewalls of the sidewall patterns 33 byperforming anisotropic etching on the sidewall material, thereby formingsidewall patterns 34 on the sidewalls of the sidewall patterns 33. Atthis time, the sidewall pattern 34 has an internal offset by the amountof the wiring pitch PH in an orthogonal direction with respect to thewiring direction DH. Then, the sidewall patterns 34 facing each otherwith a space therebetween are brought into contact with each other atthe stepped portions thereof, thereby forming openings H12 and H12′surrounded by the sidewall patterns 34. At this time, the openings H12and H12′ can be arranged in two rows in an orthogonal direction withrespect to the wiring direction DH. Moreover, the openings H12′ of thefirst row are offset from the openings H12 of the second row by thewiring pitch PH in an orthogonal direction with respect to the wiringdirection DH. The material of the sidewall patterns 34 may be the sameas or different from the material of the sidewall patterns 33.

Next, as shown in FIG. 17E, mask patterns 35 that cover the spaces ofboth end portions of the sidewall patterns 34 are formed on theprocessing target layer 38 by using the photolithography technology andthe etching technology. A resist material or a hard mask material, suchas a BSG film and a silicon nitride film, may be used as the materialfor the mask patterns 35.

Then, openings 36 and 36′ formed by transferring the openings H12 andH12′ are formed in the processing target layer 38 by etching theprocessing target layer 38 via the openings H12 and H12′. At this time,the openings 36 and 36′ can be arranged in two rows in an orthogonaldirection with respect to the wiring direction DH. Moreover, theopenings 36′ of the first row are offset from the openings 36 of thesecond row by the wiring pitch PH in an orthogonal direction withrespect to the wiring direction DH.

Then, as shown in FIG. 17F, the sidewall patterns 33 and 34 and the maskpatterns 35 are removed from over the processing target layer 38 inwhich the openings 36 and 36′ are formed. Thus, wires arranged inparallel at the wiring pitch PH in an orthogonal direction with respectto the wiring direction DH can be formed on the openings 36 and 36′along the wiring direction DH. The width of the wires can be set to ½ ofthe wiring pitch PH.

The openings H12 and H12′ partitioned by the sidewall patterns 33 and 34are formed, therefore, the layout of the openings 36 and 36′ can be setwithout depending on the positioning accuracy in photolithography. Thus,even when the wiring pitch PH is set equal to or less than theresolution of the lithography, the contacts can be formed in the wireswhile suppressing an increase in area of the contact region.

Sixth Embodiment

FIG. 18A to FIG. 18F are plan views illustrating a manufacturing methodof a contact region of a semiconductor device according to the sixthembodiment.

In FIG. 18A, core patterns 42 are formed on a processing target layer 48by using a method such as ArF immersion exposure. A plurality of thecore patterns 42 having a linear shape is formed in parallel in anorthogonal direction with respect to the wiring direction DH in such away as to be offset in a stepwise manner in three stages by the wiringpitch PH in an orthogonal direction with respect to the wiring directionDH. The wiring pitch PH can be made to correspond to a minimum pitch ofa line and space in a semiconductor integrated circuit. At this time,the width of the core pattern 42 can be set to 2 PH. Moreover, theinterval between the core patterns 42 can be set to 2 PH. A resistmaterial or a hard mask material, such as a BSG film and a siliconnitride film, may be used as the material for the core patterns 42. Theprocessing target layer 48 may be a semiconductor substrate, adielectric layer formed on the semiconductor substrate, or the like, andis not specifically limited.

Next, as shown in FIG. 18B, the core patterns 42 are slimmed by amethod, such as isotropic etching, to thin the line width of the corepatterns 42. Then, sidewall patterns 43 are formed on the sidewalls ofthe core patterns 42. At this time, the sidewall pattern 43 has aninternal offset by the amount of the wiring pitch PH in an orthogonaldirection with respect to the wiring direction DH.

Next, as shown in FIG. 18C, the core patterns 42 are removed from overthe processing target layer 48 while leaving the sidewall patterns 43 onthe processing target layer 48.

Next, as shown in FIG. 18D, sidewall patterns 44 are formed on thesidewalls of the sidewall patterns 43. At this time, the sidewallpattern 44 has an internal offset by the amount of the wiring pitch PHin an orthogonal direction with respect to the wiring direction DH.Then, the sidewall patterns 44 facing each other with a spacetherebetween are brought into contact with each other at the steppedportions thereof, thereby forming openings H13 and H13′ surrounded bythe sidewall patterns 44. At this time, the openings H13 and H13′ can bearranged in two rows in an orthogonal direction with respect to thewiring direction DH. Moreover, the openings H13′ of the first row areoffset from the openings H13 of the second row by the wiring pitch PH inan orthogonal direction with respect to the wiring direction DH. Thematerial of the sidewall patterns 44 may be the same as or differentfrom the material of the sidewall patterns 43.

Next, as shown in FIG. 18E, mask patterns 45 that cover part of thespaces of both end portions of the sidewall patterns 44 are formed onthe processing target layer 48 by using the photolithography technologyand the etching technology. A resist material or a hard mask material,such as a BSG film and a silicon nitride film, may be used as thematerial for the mask patterns 45. Then, openings 46 and 46′ formed bytransferring the openings H13 and H13′ are formed in the processingtarget layer 48 by etching the processing target layer 48 via theopenings H13 and H13′.

Then, as shown in FIG. 18F, the sidewall patterns 43 and 44 and the maskpatterns 45 are removed from over the processing target layer 48 inwhich the openings 46 and 46′ are formed.

The openings H13 and H13′ partitioned by the sidewall patterns 43 and 44are formed, therefore, the layout of the openings 46 and 46′ can be setwithout depending on the positioning accuracy in photolithography. Thus,even when the wiring pitch PH is set equal to or less than theresolution of the lithography, the contacts can be formed in the wireswhile suppressing an increase in area of the contact region.

Seventh Embodiment

FIG. 19A to FIG. 19D and FIG. 20A to FIG. 20D are plan viewsillustrating a manufacturing method of a contact region of asemiconductor device according to the seventh embodiment.

In FIG. 19A, mask patterns 51 are formed on a reticle 57. A plurality ofthe mask patterns 51 having a linear shape is formed in parallel in anorthogonal direction with respect to the wiring direction DH in such away as to be offset in the middle by the wiring pitch PH in anorthogonal direction with respect to the wiring direction DH. The wiringpitch PH can be made to correspond to a minimum pitch of a line andspace in a semiconductor integrated circuit. At this time, the width ofthe mask patterns 51 can be set to 4 PH. Moreover, the interval betweenthe mask patterns 51 can be set to 4 PH.

Then, as shown in FIG. 19B, core patterns 52 onto which the maskpatterns 51 are transferred are formed on a processing target layer 58by using a method such as ArF immersion exposure. A resist material or ahard mask material, such as a BSG film and a silicon nitride film, maybe used as the material for the core patterns 52. The processing targetlayer 58 may be a semiconductor substrate, a dielectric layer formed onthe semiconductor substrate, or the like, and is not specificallylimited.

Next, as shown in FIG. 19C, the core patterns 52 are slimmed by amethod, such as isotropic etching, to thin the line width of the corepatterns 52. Then, sidewall patterns 53 are formed on the sidewalls ofthe core patterns 52. At this time, the sidewall pattern 53 is offset inthe middle by the wiring pitch PH in an orthogonal direction withrespect to the wiring direction DH. A material having a higherselectivity than the core patterns 52 can be selected as the materialfor the sidewall patterns 53. For example, when the core pattern 52 isformed of a BSG film, a silicon nitride film can be used as the sidewallpatterns 53.

Next, as shown in FIG. 19D, the core patterns 52 are removed from overthe processing target layer 58 while leaving the sidewall patterns 53 onthe processing target layer 58.

Next, as shown in FIG. 20A, sidewall patterns 54 are formed on thesidewalls of the sidewall patterns 53. At this time, the sidewallpattern 54 is offset in the middle by the wiring pitch PH in anorthogonal direction with respect to the wiring direction DH. A materialhaving a higher selectivity than the sidewall patterns 53 can beselected as the material for the sidewall patterns 54. For example, whenthe sidewall pattern 53 is formed of a silicon nitride film, apolycrystalline silicon film can be used as the sidewall pattern 54.

Next, as shown in FIG. 20B, the sidewall patterns 53 are removed fromover the processing target layer 58 while leaving the sidewall patterns54 on the processing target layer 58.

Next, as shown in FIG. 20C, mask patterns 55 that cover part of thespaces between the sidewall patterns 54 are formed on the processingtarget layer 58 by using the photolithography technology and the etchingtechnology, thereby forming openings H14 and H14′ surrounded by thesidewall patterns 54 and the mask patterns 55. At this time, theopenings H14 and H14′ can be arranged in two rows in an orthogonaldirection with respect to the wiring direction DH. Moreover, theopenings H14′ of the first row are offset from the openings H14 of thesecond row by the wiring pitch PH in an orthogonal direction withrespect to the wiring direction DH. A resist material or a hard maskmaterial, such as a BSG film and a silicon nitride film, may be used asthe material for the mask patterns 55.

Then, openings 56 and 56′ formed by transferring the openings H14 andH14′ are formed in the processing target layer 58 by etching theprocessing target layer 58 via the openings H14 and H14′. At this time,the openings 56 and 56′ can be arranged in two rows in an orthogonaldirection with respect to the wiring direction DH. Moreover, theopenings 56′ of the first row are offset from the openings 56 of thesecond row by the wiring pitch PH in an orthogonal direction withrespect to the wiring direction DH.

Then, as shown in FIG. 20D, the sidewall patterns 54 and the maskpatterns 55 are removed from over the processing target layer 58 inwhich the openings 56 and 56′ are formed. Thus, wires arranged inparallel at the wiring pitch PH in an orthogonal direction with respectto the wiring direction DH can be formed on the openings 56 and 56′along the wiring direction DH. The width of the wires can be set to ½ ofthe wiring pitch PH.

The openings 56 and 56′ are formed in the regions partitioned by thesidewall patterns 54, therefore, even when the wiring pitch PH is setequal to or less than the resolution of the lithography, the contactscan be formed in the wires by arranging the openings 56 and 56′ in tworows.

While certain embodiments have been described, these embodiments havebeen presented by way of example only, and are not intended to limit thescope of the inventions. Indeed, the novel embodiments described hereinmay be embodied in a variety of other forms; furthermore, variousomissions, substitutions and changes in the form of the embodimentsdescribed herein may be made without departing from the spirit of theinventions. The accompanying claims and their equivalents are intendedto cover such forms or modifications as would fall within the scope andspirit of the inventions.

1-7. (canceled)
 8. A manufacturing method of a semiconductor devicecomprising: forming core patterns, onto which a plurality of linearshaped first mask patterns, each of which is offset in a middle by awiring pitch in an orthogonal direction with respect to a wiringdirection, is transferred, on a processing target layer; forming firstsidewall patterns on sidewalls of the core patterns; removing the corepatterns while leaving the first sidewall patterns on the processingtarget layer; forming a second mask pattern that covers part of a spacebetween the first sidewall patterns on the processing target layer; andforming first openings in the processing target layer by processing theprocessing target layer exposed from the first sidewall patterns and thesecond mask pattern.
 9. The manufacturing method of a semiconductordevice according to claim 8, wherein a width of the first mask patternsand an interval between the first mask patterns are twice the wiringpitch.
 10. The manufacturing method of a semiconductor device accordingto claim 8, further comprising slimming the core patterns before formingthe first sidewall patterns.
 11. The manufacturing method of asemiconductor device according to claim 8, further comprising: formingan active area isolated by a trench in a NAND flash memory; forming theprocessing target layer on the active area; embedding a contact materialin the first openings; and forming an upper layer wire connected to theactive area via the contact material on the processing target layer. 12.The manufacturing method of a semiconductor device according to claim 8,further comprising: forming a lower layer wire on an underlying layer;forming the processing target layer on the lower layer wire; embedding acontact material in the first openings; and forming an upper layer wireconnected to the lower layer wire via the contact material on theprocessing target layer.
 13. The manufacturing method of a semiconductordevice according to claim 8, further comprising: forming a mask layerbefore forming the core patterns on the processing target layer; formingsecond openings in the mask layer by processing the mask layer exposedfrom the first sidewall patterns and the second mask pattern; formingthird openings surrounded by second sidewall patterns by forming thesecond sidewall patterns on sidewalls of the second openings; andforming the first openings in the processing target layer bytransferring the third openings onto the processing target layer. 14.The manufacturing method of a semiconductor device according to claim 8,wherein a width of the first mask patterns and an interval between thefirst mask patterns are four times the wiring pitch.
 15. Themanufacturing method of a semiconductor device according to claim 14,wherein the width of the first sidewall patterns and the intervalbetween the first sidewall patterns are reduced to a half every timeformation of the first sidewall patterns is repeated with the firstsidewall patterns as a core pattern.
 16. A semiconductor devicecomprising: a plurality of wires arranged in parallel at a predeterminedpitch; a plurality of first contacts that are each connected to anodd-numbered wire among the wires and are arranged in parallel in anorthogonal direction with respect to a wiring direction of the wires;and a plurality of second contacts that are each connected to aneven-numbered wire among the wires and are arranged in parallel in anorthogonal direction with respect to the wiring direction of the wiresin such a way as to be offset from the first contacts in the wiringdirection of the wires, wherein the first contacts are offset from thesecond contacts by a pitch of the wires in an orthogonal direction withrespect to the wiring direction of the wires.
 17. The semiconductordevice according to claim 16, wherein a pitch PH of the wires satisfiesa relationshipPH<0.25*λ/NA where λ is an exposure wavelength in lithography and NA isa numerical aperture in a projection optical system.
 18. Thesemiconductor device according to claim 16, wherein an accuracy of aninterval between the first contact and the second contact is equal to anaccuracy of the pitch of the wires.
 19. The semiconductor deviceaccording to claim 16, wherein the wires are bit lines of a NAND flashmemory.
 20. The semiconductor device according to claim 19, wherein, inan active area isolated from each other by a trench, the bit lines areconnected to a high-concentration impurity diffusion layer betweenselect gate lines via the first contacts and the second contacts,respectively.